ELECTRICAL AND PHOTOELECTRICAL PROPERTIES OF CHALCOPYRITE N-AGINS2 CRYSTALS

Authors
OPANOWICZ A KOSCIELNIAKMUCHA B VASSILEV V
Citation
A. Opanowicz et al., ELECTRICAL AND PHOTOELECTRICAL PROPERTIES OF CHALCOPYRITE N-AGINS2 CRYSTALS, Crystal research and technology, 29(6), 1994, pp. 875-881
Citations number
19
Categorie Soggetti
Crystallography
Journal title
Crystal research and technology → ACNP
ISSN journal
02321300
Volume
29
Issue
6
Year of publication
1994
Pages
875 - 881
Database
ISI
SICI code
0232-1300(1994)29:6<875:EAPPOC>2.0.ZU;2-W
Abstract
The chalcopyrite n-type crystals have been grown from AgInS2 material having stoichiomtric Ag excess. The temperature dependence of the Hall effect in these crystals have been studied. The ionization energies o f donors have been determined. The dependence of the photoconduction o n the photon energy, the light intensity and the temperature in the n- AgInS2 crystals have been measured. The recombination model of photoco nductor with one class of recombination centres has been proposed for explanation of the photoelectrical results.