A. Opanowicz et al., ELECTRICAL AND PHOTOELECTRICAL PROPERTIES OF CHALCOPYRITE N-AGINS2 CRYSTALS, Crystal research and technology, 29(6), 1994, pp. 875-881
The chalcopyrite n-type crystals have been grown from AgInS2 material
having stoichiomtric Ag excess. The temperature dependence of the Hall
effect in these crystals have been studied. The ionization energies o
f donors have been determined. The dependence of the photoconduction o
n the photon energy, the light intensity and the temperature in the n-
AgInS2 crystals have been measured. The recombination model of photoco
nductor with one class of recombination centres has been proposed for
explanation of the photoelectrical results.