SYNTHESIS AND MOLECULAR-STRUCTURE OF DIPHENYLGALLIUM AND DIPHENYLINDIUM STANNANETHIOLATES - (PH(2)M[MU-SSN(C6H11)(3)])(2) - POTENTIAL PRECURSORS TO TERNARY MATERIALS

The reaction of triphenylgallium and -indium derivatives, Ph(3)M (M = Ga, In), with bis(tricyclohexyltin) sulfide, [(C6H11)(3)Sn]S-2, yields {Ph(2)M[mu-SSn(C6H11)(3)]}(2) (M Ga, 1; In, 2) and the corresponding organotin compound, PhSn(C6H11)(3). The resulting derivatives have bee n characterized by analysis and by H-1, C-13 and Sn-119 NMR spectrosco py. The structures of 1 and 2 were determined by single-crystal X-ray diffraction techniques and found to be isomorphous in the triclinic sp ace group P (1) over bar(No. 2) with cell constants a 10.825(2) Angstr om, b = 11.465(3) Angstrom, c = 13.615(3) Angstrom, a = 80.68(2)degree s, beta = 77.95(2)degrees, and gamma = 63.78(1)degrees for 1 and a 11. 198(4) Angstrom, b = 11.441(4) Angstrom, c = 13.612(3) Angstrom, alpha = 80.15(2)degrees, beta = 79.16(2)degrees, and gamma = 62.36(2)degree s for 2 with Z = 1 (dimer). The structure for 1 refined to a final R = 5.0% (R(w) = 5.2%) based on 3634 (1 > 3 sigma(T)) observed reflection s and for 2 to a final R = 3.0% (R(w) = 3.6%) based on 4107 (1 > 3 sig ma(I)) observed reflections. The compounds are dimeric with the Sn(C6H 11)3 moieties in the anti configuration. The Ga-S and Sn-S bond distan ces in 1 are 2.34(3) and 2.40(3) Angstrom. In 2 the In-S and Sn-S bond distances are 2.55(2) and 2.44(2) Angstrom.