LASER-INDUCED FLUORESCENCE MEASUREMENTS AND KINETIC-ANALYSIS OF SI ATOM FORMATION IN A ROTATING-DISK CHEMICAL-VAPOR-DEPOSITION REACTOR

An extensive set of laser-induced fluorescence (LIF) measurements of S i atoms during the chemical vapor deposition (CVD) of silicon from sil ane and disilane in a research rotating disk reactor are presented. Th e experimental results are compared in detail with predictions from a numerical model of CVD from silane and disilane that treats the fluid flow coupled to gas-phase and gas-surface chemistry, The comparisons s howed that the unimolecular decomposition of SiH2 could not account fo r the observed gas-phase Si atom density profiles. The H3SiSiH <-> Si + SiH4 and H3SiSiH + SiH2 <-> Si + Si2H6 reactions are proposed as the primary Si atom production routes. The model is in good agreement wit h the measured shapes of the Si atom profiles and the trends in Si ato m density with susceptor temperature, pressure, and reactant gas mixtu re.