ANISOTROPIC HOLE SCATTERING IN HEXAGONAL GAN

Authors
LEE BC MANSOUR NS SIRENKO YM KIM KW LITTLEJOHN MA
Citation
Bc. Lee et al., ANISOTROPIC HOLE SCATTERING IN HEXAGONAL GAN, Semiconductor science and technology, 12(3), 1997, pp. 280-283
Citations number
23
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
12
Issue
3
Year of publication
1997
Pages
280 - 283
Database
ISI
SICI code
0268-1242(1997)12:3<280:AHSIHG>2.0.ZU;2-6
Abstract
We calculate the hole scattering rate owing to the interaction with po lar optical phonons and ionized impurities in bulk wurtzite GaN. The v alence band states of this hexagonal material are obtained from a 6 x 6 matrix Hamiltonian. The calculated scattering rate shows strong orie ntational dependence with respect to the crystal c-axis. Analysis show s that both anisotropy in the dispersion relations and the Bloch overl ap factors are important for a proper description of hole scattering.