THE INVESTIGATION OF AN ANNEALING EFFECT ON THE DENSITY-OF-STATES IN A-SI-H FILM

In this study the reverse bias annealing effect on the density of stat es (DOS) in a-Si:H film was investigated. In order to discover the eff ect of reverse bias thermal annealing on the DOS in a p/i/n structure of p(+)-type)/a-Si:H(intrinsic)/a-Si:H(n(+)-type)/Al, capacitance-freq uency characteristics were measured in the frequency range of 5 Hz-100 kHz for annealing temperatures of 23-175 degrees C. The changes in th e DOS of the i-region and of the n-region for the different annealing temperatures were determined by means of Pfleiderer's model and the re sults are listed in a table.