ULTRAFAST OPTOELECTRONIC CHARACTERIZATION OF MICROWAVE SEMICONDUCTOR DIODES

Authors
ADOMAVICIUS R KROTKUS A ZAKAREVICIUS R
Citation
R. Adomavicius et al., ULTRAFAST OPTOELECTRONIC CHARACTERIZATION OF MICROWAVE SEMICONDUCTOR DIODES, Microwave and optical technology letters, 7(16), 1994, pp. 741-744
Citations number
NO
Categorie Soggetti
Optics,"Engineering, Eletrical & Electronic
Journal title
Microwave and optical technology letters → ACNP
ISSN journal
08952477
Volume
7
Issue
16
Year of publication
1994
Pages
741 - 744
Database
ISI
SICI code
0895-2477(1994)7:16<741:UOCOMS>2.0.ZU;2-U
Abstract
Microwave semiconductor diodes are characterized on a picosecond time scale by means of an optoelectronic technique, in which the diode is b iased with a variable-duration high-voltage pulse, while its output cu rrent is integrated with a box-car integrator. Measured data on three different devices illustrate the technique. (C) 1994 John Wiley & Sons , Inc.