RELAXATION OF RADIATION-DAMAGE IN SILICON PLANAR DETECTORS

The behavior of radiation-induced carbon-related defects in high-resis tivity silicon detectors has been investigated. The defects were intro duced by alpha-particle irradiation and investigated by deep-level tra nsient spectroscopy. An unusual defect behavior consists in low-temper ature annealing, including self-annealing at room temperature, of the interstitial carbon C(i) with a simultaneous increase of the C(i)-O(i) -complex concentration. The kinetic parameters of the process have bee n determined from the increase of the C(i)-center concentration versus time. Two annealing velocities have been observed, which arise from d ifferent heat treatments during the detector fabrication process.