X-RAY AND ELECTRON-OPTICAL CHARACTERIZATION OF ZNTE CDTE AND ZNTE/GAAS EPITAXIAL LAYERS OBTAINED BY THE MBE METHOD/

X-ray diffraction topography (Bragg diffraction) and X-ray rocking cur ve measurements were used to study the perfection and structural prope rties of ZnTe epitaxial layers on the CdTe and GaAs substrates. ZnTe e pitaxial layers on CdTe were grown by MBE method by using a machine ma de in the Institute of Physics of the Polish Academy of Sciences. The ZnTe layers on GaAs were produced on the other, factory-made MBE syste m. The compar-son between the X-ray topographical images of the substr ate and epitaxial layer shows that imperfections on the substrate surf ace cause imperfections in the epitaxial layer. The results of double- crystal diffractometry measurements show that the perfection of the la yer on the GaAs substrate is higher than that on the CdTe. The presenc e of microtwining in the ZnTe layer on the CdTe substrate was confirme d by RHEED measurements. The X-ray standing wave fluorescent spectra w ere also measured for the samples.