We have developed a new method for the integration of ion-sensitive me
mbranes and silicon sensor chips. The ion-sensitive membrane is deposi
ted in pyramidal containments produced on silicon by an anisotropic et
ching technique. Here we demonstrate the application of this method to
the development of nitrate-sensitive sensors. PVC membranes are cast
into the membrane containment. The sensors show an improved mechanical
stability and lifetime compared to ISFETs. Slopes, detection limits a
nd selectivities of the containment sensors are similar to those of io
n-selective electrodes with internal electrolyte solution using the sa
me membrane composition. The results of the drift and hysteresis measu
rements are sufficiently good for most practical applications.