HIGH-TEMPERATURE ANISOTROPY OF THE CONDUCTIVITY OF SUPERLATTICES OF GAAS QUANTUM WIRES GROWN ON FACETED 311A SURFACES

Authors
PRINTS VY PANAEV IA PREOBRAZHENSKII VV SEMYAGIN BR
Citation
Vy. Prints et al., HIGH-TEMPERATURE ANISOTROPY OF THE CONDUCTIVITY OF SUPERLATTICES OF GAAS QUANTUM WIRES GROWN ON FACETED 311A SURFACES, JETP letters, 60(3), 1994, pp. 217-220
Citations number
9
Categorie Soggetti
Physics
Journal title
JETP letters → ACNP
ISSN journal
00213640
Volume
60
Issue
3
Year of publication
1994
Pages
217 - 220
Database
ISI
SICI code
0021-3640(1994)60:3<217:HAOTCO>2.0.ZU;2-5
Abstract
Lateral superlattices of GaAs quantum wires, which have a strongly ani sotropic p-type conductivity up to T almost-equal-to 500 K, can be gro wn on 311A surfaces. The temperature dependence of the conductivity, t he Hall mobility, and the hole density in lateral superlattices of thi s type with a modulated doping have been studied experimentally. (C) 1 994 American Institute of Physics.