EFFECT OF CONCURRENT IRRADIATION WITH ELECTRONS ON ION-INDUCED AMORPHIZATION IN SILICON

The effect of concurrent irradiation with electrons on ion-induced amo rphization has been investigated under irradiation with high energy io ns and fast electrons in the HVEM-TANDEM Facility at Argonne National Laboratory. The simultaneous irradiation with a focused electron beam prevents or retards the ion-induced amorphization, forming a distinct interface between crystalline and amorphous regions. The position of t he interface has been converted to the critical electron flux, which i ncreases with increasing energy deposition density and flux of ions an d energy of electrons. It is concluded that amorphous embryos are esse ntially formed through overlap of subcascades, and that the prevention of ion-induced amorphization is mainly caused by athermal migration o f point defects.