Bubble formation in Ni during He implantation is studied in dependence
upon temperature and He production rate. For three different helium p
roduction rates (9, 50 and 260 appm h(-1)), the temperature has been v
aried between 523 and 1050 K. The nominal helium content in each case
after implantation was 100 appm. Subsequently performed TEM investigat
ions yielded monomodal bubble size distributions. The measured bubble
densities and mean radii show Arrhenius behaviour in a low temperature
regime characterized by low apparent activation energies and in a hig
h temperature regime characterized by high apparent activation energie
s. These activation energies provide evidence that the low temperature
regime is controlled by He diffusion via the self-interstitial/He rep
lacement mechanism and the high temperature regime is He dissociation
controlled according to standard nucleation models. For the high tempe
rature regime also the rate dependencies confirm these findings. We co
mpare our results with other experimental findings.