RAMAN-SCATTERING STUDY OF TO PHONON MODES IN INGAASP GAAS

Authors
SUGIURA T HASE N GOTO H HIRAMATSU K SAWAKI N
Citation
T. Sugiura et al., RAMAN-SCATTERING STUDY OF TO PHONON MODES IN INGAASP GAAS, Semiconductor science and technology, 9(10), 1994, pp. 1800-1804
Citations number
20
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
9
Issue
10
Year of publication
1994
Pages
1800 - 1804
Database
ISI
SICI code
0268-1242(1994)9:10<1800:RSOTPM>2.0.ZU;2-D
Abstract
We have studied the behaviour of TO phonon modes in InxGa1-xAsyP1-y gr own on GaAs (100) and (111)A substrates by means of Raman scattering. It was found that the small peak which appeared between the GaP-like L O1 and InP-like LO2 modes is due to the GaP-like TO1 phonon mode. The mode calculation based on the cell isodisplacement theory was in good agreement with the experimental results.