GROWTH OF GAAS AND (GE2)(X)(GAAS)(1-X) ON SI USING ULTRAFAST COOLING OF THE GROWTH SOLUTION

Authors
ABRAMOV AV DERYAGIN NG TRETYAKOV DN
Citation
Av. Abramov et al., GROWTH OF GAAS AND (GE2)(X)(GAAS)(1-X) ON SI USING ULTRAFAST COOLING OF THE GROWTH SOLUTION, Semiconductor science and technology, 9(10), 1994, pp. 1815-1822
Citations number
24
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
9
Issue
10
Year of publication
1994
Pages
1815 - 1822
Database
ISI
SICI code
0268-1242(1994)9:10<1815:GOGA(O>2.0.ZU;2-2
Abstract
A modification of liquid-phase epitaxy has been developed to grow epit axial layers by ultrafast cooling (approximately 10(2)-10(3) degree-C s-1) of solutions supersaturated beyond the critical value. Epilayers of GaAs and metastable (Ge2)x(GaAs)1-x solid solutions were grown on S i (111) substrates, and specific features of the crystallization proce ss were investigated. It is shown that, for GaAs layers to grow on Si, Ga and Sn solutions must be supercooled far below the critical point in the initial growth stage. The composition, structural perfection an d luminescence properties of the grown layers have been studied.