CLUSTER CALCULATION OF THE BORON CENTER IN SIC

Authors
PETRENKO TL BUGAI AA BARYAKHTAR VG TESLENKO VV KHAVRYUTCHENKO VD
Citation
Tl. Petrenko et al., CLUSTER CALCULATION OF THE BORON CENTER IN SIC, Semiconductor science and technology, 9(10), 1994, pp. 1849-1852
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
9
Issue
10
Year of publication
1994
Pages
1849 - 1852
Database
ISI
SICI code
0268-1242(1994)9:10<1849:CCOTBC>2.0.ZU;2-P
Abstract
Calculations using the self-consistent unrestricted Hartree-Fock-Rooth an method are carried out in the MNDO approximation for a cluster of 3 5 host atoms of cubic SiC with a boron impurity. The equilibrium geome try and the hyperfine and quadrupole constants are obtained and compar ed with experimental values. The computed parameters reveal the main f eatures of boron impurities in SiC.