Vk. Kudoyarova et al., OPTICAL AND ELECTRICAL-PROPERTIES OF A-SI1-XCX-H LAYERS IN CONNECTIONWITH PROMISING ELECTROPHOTOGRAPHIC APPLICATIONS, Semiconductors, 28(8), 1994, pp. 742-747
A multifaceted study has been made of optical, structural, and electri
cal properties of layers of amorphous hydrogenated silicon carbide, a-
Si1-xCx:H, over the composition range 0<x<0.5. The material was produc
ed from CH4+SiH4+Ar/H-2 mixtures in the plasma of an rf glow discharge
. These solid solutions were studied in connection with their use in e
lectrophotography. It is shown that amorphous hydrogenated silicon car
bide can be used in multilayer electrophotographic layers. It can be u
sed as a blocking layer (so a bicharge regime of information storage b
ecomes possible), as a passivating layer (so it becomes possible to im
prove the process by which charge is accumulated at the surface), and
as a charge-transfer layer. The conditions for producing a-Si1-xCx:H f
or each of the layers have been optimized. The results found have been
pursued to the point of device (practical) realization; i.e., electro
photographic prints have been obtained.