PSEUDODOPING AND ANNEALING OF AMORPHOUS HYDROGENATED SILICON

The effect of annealing on the photoelectric properties of pseudodoped a-Si:H samples has been studied. The annealing temperatures were 300- 390 degrees C. Thermal relaxation of the structural network of the gro wn film leads to a decrease in the concentration of ruptured bonds and to shifts of the Fermi level toward the center of the mobility gap. T he effects are the same as those caused by a decrease in the intensity of the bombardment of the growing film by plasma particles.