ELECTRON-MOBILITY AND DENSITY-OF-STATES IN A-C-H

Citation
Oi. Konkov et al., ELECTRON-MOBILITY AND DENSITY-OF-STATES IN A-C-H, Semiconductors, 28(8), 1994, pp. 791-792
Citations number
5
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
10637826
Volume
28
Issue
8
Year of publication
1994
Pages
791 - 792
Database
ISI
SICI code
1063-7826(1994)28:8<791:EADIA>2.0.ZU;2-H
Abstract
The electrical properties and electron drift mobility in films of amor phous hydrogenated carbon have been studied. The films were grown by r f decomposition of CH4+Ar/H-2 mixtures at temperatures of 25 and 250 d egrees C. The experimental data can be explained satisfactorily under the assumption that the distribution of the density of states in the t ail of the conduction band is Gaussian with a characteristic temperatu re of 1000-1400 K. The electron mobility is estimated to be more than 1 cm(2)/(V.s) for all the films studied.