NEW MODEL FOR EXPLAINING SPECTROSCOPIC CHARACTERISTICS OF THERMAL OXYGEN DONORS IN SILICON

Authors
MAKARENKO LF
Citation
Lf. Makarenko, NEW MODEL FOR EXPLAINING SPECTROSCOPIC CHARACTERISTICS OF THERMAL OXYGEN DONORS IN SILICON, Semiconductors, 28(8), 1994, pp. 806-808
Citations number
14
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
28
Issue
8
Year of publication
1994
Pages
806 - 808
Database
ISI
SICI code
1063-7826(1994)28:8<806:NMFESC>2.0.ZU;2-9
Abstract
Spectroscopic characteristics of thermal oxygen donors in silicon can be explained by treating the defect as an analog of a hydrogen molecul e.