DEEP LEVELS IN SINGLE-CRYSTAL AND POLYCRYSTALLINE ZNSE BOMBARDED BY ELECTRONS

Authors
OKONECHNIKOV AP MELNIK NN
Citation
Ap. Okonechnikov et Nn. Melnik, DEEP LEVELS IN SINGLE-CRYSTAL AND POLYCRYSTALLINE ZNSE BOMBARDED BY ELECTRONS, Semiconductors, 28(8), 1994, pp. 826-828
Citations number
9
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
28
Issue
8
Year of publication
1994
Pages
826 - 828
Database
ISI
SICI code
1063-7826(1994)28:8<826:DLISAP>2.0.ZU;2-O
Abstract
The effect of the structure of ZnSe on the formation and annealing out of radiation-induced defects has been studied experimentally.