This paper reports on a 100 cm(2) single crystalline silicon solar cel
l with a conversion efficiency of 19.44% (J(sc) = 37.65 mA/cm(2), V-oc
= 638 mV, FF = 0.809). The cell structure is as simple as only applyi
ng the textured surface, oxide passivation, and back surface field by
the screen printing method. The comparison between cell performances o
f the CZ (Czochralski) and FZ (Floating zone) silicon substrates was i
nvestigated. The higher efficiency cells were obtained for the CZ subs
trate rather than the CZ substrate. The influence of the phosphorus co
ncentration of the emitter on the cell efficiency has also been invest
igated. A good result was obtained when the surface concentration of p
hosphorus was 3 x 10(20) cm(-3) and the junction depth was about 0.6 m
u m.