VERY-LOW SURFACE RECOMBINATION VELOCITIES ON 2.5-OHM-CM SI WAFERS, OBTAINED WITH LOW-TEMPERATURE PECVD OF SI-OXIDE AND SI-NITRIDE

Authors
LEGUIJT C LOLGEN P EIKELBOOM JA AMESZ PH STEEMAN RA SINKE WC SARRO PM VERHOEF LA MICHIELS PP CHEN ZH ROHATGI A
Citation
C. Leguijt et al., VERY-LOW SURFACE RECOMBINATION VELOCITIES ON 2.5-OHM-CM SI WAFERS, OBTAINED WITH LOW-TEMPERATURE PECVD OF SI-OXIDE AND SI-NITRIDE, Solar energy materials and solar cells, 34(1-4), 1994, pp. 177-181
Citations number
16
Categorie Soggetti
Energy & Fuels","Material Science
Journal title
Solar energy materials and solar cells → ACNP
ISSN journal
09270248
Volume
34
Issue
1-4
Year of publication
1994
Pages
177 - 181
Database
ISI
SICI code
0927-0248(1994)34:1-4<177:VSRVO2>2.0.ZU;2-5
Abstract
In this paper we present the first measurements of very low surface re combination velocities (< 90 cm/s) on 2.5 Omega cm p-type silicon wafe rs, passivated with low-temperature PECVD (Plasma Enhanced Chemical Va pour Deposition) of Si-oxide and Si-nitride. Also n-type emitter surfa ces were passivated by PECVD. A forming gas anneal turned out to be cr ucial in achieving low recombination velocities. No increase of the su rface recombination velocity was observed after exposure of the layers to white light at 30 degrees C and 1000 W/m(2) for 500 h.