HIGH-EFFICIENCY SILICON SOLAR-CELLS BY PLASMA-CVD METHOD

We have succeeded in obtaining excellent Back Surface Field (BSF) stru ctures by depositing a highly doped silicon layer on the back side of the substrate even though the textured wafer is used. The substantial increase of the spectral response in longer wavelength has been observ ed and an increase of V-oc has also been found. The BSF formation tech nology, together with the low temperature grown thin a-Si emitter laye r with appropriate bandgap, has enabled us to obtain a very high J(sc) of 40.5 mA/cm(2), thus a high active area conversion efficiency of 18 .9% (V-oc = 0.592 V, FF = 0.789).