HYDROGEN, FLUORINE ION-IMPLANTATION EFFECTS ON POLYCRYSTALLINE SILICON GRAIN-BOUNDARIES

The influences of hydrogen and fluorine ion implantation on polycrysta lline silicon (poly-Si) grain boundaries have been investigated. Effec tive passivation of poly-Si grain boundaries was achieved by hydrogen ion implantation at 300-400 degrees C. From fluorine implantation expe riments, we confirmed that fluorine atoms in poly-Si were redistribute d with a diffusion tail after annealing at above 600 degrees C. A diff usion tail of fluorine redistribution was not observed in single cryst alline silicon. We think that it is possible to passivate poly-Si grai n boundaries by controlling the diffusion of fluorine.