A detailed investigation of quality enhancement techniques, such as PE
CVD SiO2/SiN deposition and forming gas anneal (FGA) for defect passiv
ation, and Al treatment for defect and impurity gettering, was conduct
ed on several promising multicrystalline Si materials. The PECVD SiO2/
SiN coating increased the bulk lifetime by a factor of 1.3 to 1.7, and
decreased the surface recombination by a factor of 5-22, depending up
on the multicrystalline material. FGA in conjunction with Al treatment
improved the EFG sheet Si cells efficiency by 5.3% absolute, with 2.6
% improvement resulting from the FGA alone, 1.5% from Al gettering alo
ne, and 1.2% from Al diffusion and FGA interaction. Cells fabricated o
n various multicrystalline materials were in the efficiency range of 1
4.0-17.7% with highest efficiency on cast silicon from Osaka Titanium
Corporation.