SEMICONDUCTOR LIQUID-PHASE EPITAXY FOR SOLAR-CELL APPLICATION

This paper describes liquid phase epitaxy techniques which have been d eveloped for growing semiconductor layers on 100 mm diameter substrate s for solar cells. We have prepared Si and GaAs layered structures, wh ose surface textures have the shapes of pyramids, roofs, or mesa facet s of different size and periodicity. Microscopic growth mechanisms inf luence surface and interface morphologies of the layers as well as the ir electronic and optical properties. Sharp doping profiles are measur ed at interfaces of grown layers.