F. Smole et al., AMORPHOUS-SILICON SOLAR-CELL COMPUTER-MODEL INCORPORATING THE EFFECTSOF TCO A-SI-C-H JUNCTION, Solar energy materials and solar cells, 34(1-4), 1994, pp. 385-392
A simulation model of amorphous silicon solar cells ASPIN has been ext
ended to incorporate the material properties of the TCO/a-Si:C:H inter
face region, which plays an important role in p-i-n a-Si:H solar cells
and can strongly influence their photoelectrical characteristics. The
analysis includes the impact of band bending at the front a-Si:C:H su
rface due to the difference between the work functions of TCO and a-Si
:C:H and the influence of an increased surface density of states at th
e TCO/a-Si:C:H interface on internal and external characteristics.