AMORPHOUS-SILICON SOLAR-CELL COMPUTER-MODEL INCORPORATING THE EFFECTSOF TCO A-SI-C-H JUNCTION

Authors
SMOLE F TOPIC M FURLAN J
Citation
F. Smole et al., AMORPHOUS-SILICON SOLAR-CELL COMPUTER-MODEL INCORPORATING THE EFFECTSOF TCO A-SI-C-H JUNCTION, Solar energy materials and solar cells, 34(1-4), 1994, pp. 385-392
Citations number
13
Categorie Soggetti
Energy & Fuels","Material Science
Journal title
Solar energy materials and solar cells → ACNP
ISSN journal
09270248
Volume
34
Issue
1-4
Year of publication
1994
Pages
385 - 392
Database
ISI
SICI code
0927-0248(1994)34:1-4<385:ASCITE>2.0.ZU;2-#
Abstract
A simulation model of amorphous silicon solar cells ASPIN has been ext ended to incorporate the material properties of the TCO/a-Si:C:H inter face region, which plays an important role in p-i-n a-Si:H solar cells and can strongly influence their photoelectrical characteristics. The analysis includes the impact of band bending at the front a-Si:C:H su rface due to the difference between the work functions of TCO and a-Si :C:H and the influence of an increased surface density of states at th e TCO/a-Si:C:H interface on internal and external characteristics.