ACCELERATED DEGRADATION TEST METHOD FOR A-SI PV MODULES

Citation
S. Igari et al., ACCELERATED DEGRADATION TEST METHOD FOR A-SI PV MODULES, Solar energy materials and solar cells, 34(1-4), 1994, pp. 473-483
Citations number
3
Categorie Soggetti
Energy & Fuels","Material Science
ISSN journal
09270248
Volume
34
Issue
1-4
Year of publication
1994
Pages
473 - 483
Database
ISI
SICI code
0927-0248(1994)34:1-4<473:ADTMFA>2.0.ZU;2-8
Abstract
The first-year degradation rate of P-max (degradation in 1 year) and t he seasonal behaviour of amorphous silicon photovoltaic modules are ve ry important for the design of PV systems using them and for R&D of a- Si PV modules with small degradation and high stabilized efficiency. I t is profitable to estimate them in a short time. We obtained accurate degradation data from periodical measurements using a solar simulator at standard test condition (STC) and we have analyzed outdoor exposur e test data at Setagaya site in Tokyo. Paying attention to two main st resses of light intensity and sample temperature for electrical parame ters of a-Si PV modules, we tried to establish a constant-stress accel erated degradation test method for a-Si PV modules by using a light-te mperature combined accelerated test chamber and studied an applicabili ty of light soaking.