INVESTIGATION OF THE SWITCHING PHENOMENA IN INDIUM MONOTELLURIDE SINGLE-CRYSTALS

An investigation of the switching effect in InTe shows that the switch ing parameters (I-th, U-th, P-th, E(th), and R(OFF)/R(ON)) are sensiti ve to temperature, light intensity, and sample thickness as well. The L-U characteristic is symmetric with respect to the polarity of the ap plied field. The switching effect observed in such crystals shows memo ry. A critical field of 10(3) V/cm is necessary for switching phenomen a to appear at room temperature. The threshold field is dependent on t he thickness of the active region E(th)d(-0.77). InTe with such proper ties can be used in switching devices.