ON THE HIGH-ELECTRIC-FIELD MOBILITY BEHAVIOR IN SI MOSFETS FROM ROOM TO LIQUID-HELIUM TEMPERATURE

The carrier mobility in N- und P-channel MOSFET's at high transverse e lectric field is studied from room to liquid helium temperature. It is shown that the negative transconductance phenomenon obtained at high gate voltage is enlarged by decreasing the temperature. This behavior is attributed to a change in the mobility law for high transverse elec tric field. An accurate extraction method is proposed in order to dete rmine the new parameters involved in the mobility and the drain curren t laws. These new relations are successfully employed for the fitting of experimental results obtained with MOS devices from various technol ogies.