IMPURITY DEPENDENCE OF OXIDE DEFECTS IN CZOCHRALSKI SILICON

Octahedral cavities have recently been found in the Czochralski silico n (CZ-Si) substrate surface layer just under oxide defects. We investi gate the effect that adding HCl to oxygen during oxidation has on the oxide defect density. The effect of intentionally introducing impuriti es onto a Si surface on the oxide defect density is also examined. Our experimental results suggest that impurities are closely related to t he generation of oxide defects. A model is presented in which impuriti es are incorporated into the growing octahedral cavities during Si cry stal growth, and then introduced into the growing oxides during therma l oxidation. These impurities in the oxides then act as a conductive p ath (oxide defects) in the insulator on the CZ-Si. (C) 1996 American I nstitute of Physics.