The elasticity and anelasticity of Ni50Ti50 films deposited on Si subs
trates were studied, yielding information on the damping and modulus s
oftening. It was found that the transformation behavior strongly depen
ds on the film thickness and approaches bulk Ni50Ti50 behavior as the
film becomes a few microns thick. For the same film thickness the tran
sformation depends on the film-substrate adhesion. In films with good
adhesion, cross-sectional transmission electron microscopy reveals a t
hin parent phase layer which does not transform, while the bulk part o
f the Ni50Ti50 film transforms. It is thus proposed that interface con
straints stabilize the B2 structure. A microscopic interpretation in t
erms of transformation strains at the interface is given.