SPICE MODEL AND PARAMETERS FOR FULLY-DEPLETED SOI MOSFETS INCLUDING SELF-HEATING

A simple methodology to accurately extract constant temperature model parameters from static measurements of fully-depleted SOI MOSFET curre nt-voltage characteristics is demonstrated. Self-heating is included i n an existing physically-based, short-channel bulk MOSFET model, PCIM [8] by allowing the temperature to change linearly with power dissipat ion at each bias point. Only a simple modification of the channel bulk charge in PCIM is necessary to adapt it for SOI. The temperature depe ndence of the physical parameters (mobility, flatband voltage, and sat uration velocity) are also fitted and included in the model. Excellent fit to experimental fully-depleted SOI data is shown over a large ran ge of bias conditions and channel lengths. Once the static SOI data is fitted, the constant temperature model parameters appropriate for cir cuit simulation are easily extracted.