IMPACT IONIZATION AND REAL-SPACE TRANSFER OF MINORITY-CARRIERS IN CHARGE INJECTION TRANSISTORS

Authors
TEDESCO C MASTRAPASQUA M CANALI C LURYI S MANFREDI M ZANONI E SIVCO DL CHO AY
Citation
C. Tedesco et al., IMPACT IONIZATION AND REAL-SPACE TRANSFER OF MINORITY-CARRIERS IN CHARGE INJECTION TRANSISTORS, IEEE electron device letters, 15(10), 1994, pp. 377-379
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
15
Issue
10
Year of publication
1994
Pages
377 - 379
Database
ISI
SICI code
0741-3106(1994)15:10<377:IIARTO>2.0.ZU;2-Y
Abstract
High electric fields in the channel of InGaAs/InAlAs heterostructure c omplementary charge injection transistor give rise to impact ionizatio n and real-space transfer of minority holes from the channel. These ph enomena are investigated by measuring light emission in the 1.1-3.1 eV energy range for different points on the electrical characteristics. The effective carrier temperature, determined from the exponential tai ls of electroluminescence spectra, is 2100 K in the channel and 450 K in the barrier.