A COMPARATIVE-STUDY OF GAINP GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY CBE USING TBA/TBP AND ASH3/PH3 SOURCES/

Authors
NG GI PAVLIDIS D SAMELIS A PEHLKE D GARCIA JC HIRTZ JP
Citation
Gi. Ng et al., A COMPARATIVE-STUDY OF GAINP GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY CBE USING TBA/TBP AND ASH3/PH3 SOURCES/, IEEE electron device letters, 15(10), 1994, pp. 380-382
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
15
Issue
10
Year of publication
1994
Pages
380 - 382
Database
ISI
SICI code
0741-3106(1994)15:10<380:ACOGGH>2.0.ZU;2-6
Abstract
GaInP/GaAs Heterojunction Bipolar Transistors (HBT's) have been fabric ated on epitaxial layers grown by Chemical Beam Epitaxy (CBE) using an all metalorganic approach. Reduced toxicity tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP) were used for group V Sources. DC re sults showed good base and collector current ideality factors of 1.23 and 1.05 respectively. The maximum de current of 50 was obtained. A co mparison of these results with HBT characteristics obtained using AsH3 /PH3 or TBA/PH3 demonstrates the feasibility of replacing the toxic As H3 and PH3 by less toxic TBA and TBP sources in the growth of GaInP/Ga As HBT's.