A SIMPLE EDGE TERMINATION FOR SILICON-CARBIDE DEVICES WITH NEARLY IDEAL BREAKDOWN VOLTAGE

Authors
ALOK D BALIGA BJ MCLARTY PK
Citation
D. Alok et al., A SIMPLE EDGE TERMINATION FOR SILICON-CARBIDE DEVICES WITH NEARLY IDEAL BREAKDOWN VOLTAGE, IEEE electron device letters, 15(10), 1994, pp. 394-395
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
15
Issue
10
Year of publication
1994
Pages
394 - 395
Database
ISI
SICI code
0741-3106(1994)15:10<394:ASETFS>2.0.ZU;2-1
Abstract
In this paper, a simple edge termination is described which can achiev e near ideal parallel plane breakdown for silicon carbide devices. Thi s novel edge termination involves self aligned implantation of a neutr al species on the edges of devices to form an amorphous layer. With th is termination formed using argon implantation, the breakdown voltage of Schottky barrier diodes was measured to be very close to ideal plan e parallel breakdown voltage.