A VERTICAL SUBMICRON POLYSILICON THIN-FILM-TRANSISTOR USING A LOW-TEMPERATURE PROCESS

This letter presents a submicron (0.5 mu) vertical N-channel MOS thin- film transistor (TFT) fabricated in Polycrystalline Si using a simple low temperature process (less than or equal to 600 degrees C). The cha nnel length is determined by the thickness of an SiO2 film. As a resul t, submicron vertical polysilicon TFT's can be fabricated without subm icron lithographirc equipment that is not yet available for large area active matrix liquid crystal display (AMLCD) applications. The device has a dynamic range of greater than five orders of magnitude after hy drogenation.