MOS CHARACTERISTICS OF ULTRATHIN NO-GROWN OXYNITRIDES

In this paper, we report for the first time, the growth of high qualit y ultrathin oxynitrides formed by nitridation of SiO2 in nitric oxide (NO) ambient using in-situ rapid thermal processing (RTP). This proces s is highly self-limited compared with N2O oxidation of silicon. A sig nificant improvement in the interface endurance and charge trapping pr operties, under constant current stress, compared to pure O-2-grown an d N2O-grown oxides is observed. The NO growth process will have a grea t impact on future CMOS and EEPROM technologies.