THERMAL-OXIDATION OF GH-SILICON CARBIDE AT ENHANCED GROWTH-RATES

A new oxidation scheme with enhanced growth rate for silicon carbide i s reported in this paper. It is based upon the formation of a thick am orphous layer created using high dose ion implantation followed by the rmal oxidation. The oxide thickness has been demonstrated to be larger in the amorphized region when compared to the unimplanted (monocrysta lline SiC) region. The breakdown field strength of this oxide (8 MV/cm ) is comparable to that obtained for thermal oxide groan on silicon. C -V measurements indicate the presence of large negative charge in the oxide grown using this method.