CORRELATION OF BUFFER STRAIN RELAXATION MODES WITH TRANSPORT-PROPERTIES OF 2-DIMENSIONAL ELECTRON GASES

Authors
GOLDMAN RS KAVANAGH KL WIEDER HH ROBBINS VM EHRLICH SN FEENSTRA RM
Citation
Rs. Goldman et al., CORRELATION OF BUFFER STRAIN RELAXATION MODES WITH TRANSPORT-PROPERTIES OF 2-DIMENSIONAL ELECTRON GASES, Journal of applied physics, 80(12), 1996, pp. 6849-6854
Citations number
33
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
80
Issue
12
Year of publication
1996
Pages
6849 - 6854
Database
ISI
SICI code
0021-8979(1996)80:12<6849:COBSRM>2.0.ZU;2-Y
Abstract
We have investigated the effects of buffer strain relaxation on the tr ansport properties of two-dimensional electron gases (2DEGs). The 2DEG s consist of modulation-doped In0.53Ga0.47As/In0.52Al0.48As heterostru ctures grown lattice-mismatched to. GaAs via compositionally step-grad ed InxGa1-xAs buffers, with different composition gradients, or lattic e-matched to InP. We find a variation in 2DEC electronic properties wh ich occurs simultaneously with large differences in epilayer tilt and mosaic spread in the step-graded buffers. This indicates a correlation between the mechanism of buffer strain relaxation and the 2DEG transp ort properties. (C) 1996 American Institute of Physics.