THE ELECTRONIC-STRUCTURE OF INGAAS INP QUANTUM-WELLS MEASURED BY FOURIER-TRANSFORM PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY/

We report on novel results from a systematic study of excitonic transi tions in high quality metalorganic vapor phase epitaxy grown InxGa1-xA s/InP quantum wells (QWs). The electronic structure of the QWs has bee n studied as a function of QW width as well as the built-in strain. Th e characterization has been performed by means of a combined Fourier t ransform photoluminescence (FTPL) and FTPL excitation study of the Inx Ga1-xAs/InP QWs. Detailed information on the energy positions for the excitons associated with various subbands (for the electrons, heavy an d light holes) up to n = 5 have been obtained. The experimentally dete rmined energy positions have been compared with theoretical prediction s based on an effective mass model and bulk deformation potential theo ry. (C) 1996 American Institute of Physics.