EFFECTS OF NONUNIFORM CHARGE INJECTION ON GAIN, THRESHOLD CURRENT, AND LINEWIDTH ENHANCEMENT FACTOR FOR A 1.55-MU-M INP-BASED MULTIPLE-QUANTUM-WELL LASER

In laser structures where the active region consists of several quantu m wells, non-uniform charge injection can occur. We examine the conseq uences of non-uniform charge injection on gain, threshold current, and linewidth enhancement factor. Non-uniform charge injection in a InP-b ased multiple quantum well laser was considered in order to analyze ef fects on gain, threshold current, and linewidth enhancement factor. We find that although the best values for gain, threshold current and li newidth enhancement factor occur under uniform charge injection condit ions, these parameters do not suffer significant degradation under eve n highly non-uniform charge injection. (C) 1996 American Institute of Physics.