PHOTOACOUSTIC-SPECTROSCOPY OF DILUTED MAGNETIC SEMICONDUCTORS

The absorption coefficient of several diluted magnetic semiconductors was measured below the fundamental absorption edge of the pure host co mpound at room temperature using the photoacoustic technique. Several absorption bands have been detected and assigned to electronic transit ions between the crystal field split 3d levels of the transition metal ion. In addition, weak absorption thresholds have been observed and a ssigned to the ionization of the transition metal d states. An energy level diagram of the d states has been discussed. (C) 1996 American In stitute of Physics.