Reaction of polycrystalline B4C with energetic O-2(+) was investigated
mainly using Rutherford backscattering spectroscopy (RBS). For 5 keV
O-2(+) irradiation, all of the irradiated oxygen was retained up to th
e fluence of 2 x 10(17) O/cm(2) in a temperature range from RT to 600
degrees C. The areal density of saturated retention was similar to 3 x
10(17) O/cm(2). The release of the implanted oxygen begins above 600
degrees C and almost all the oxygen desorbs at similar to 1000 degrees
C. The depth profile of oxygen retained at RT had a big maximum aroun
d 8 nm, while the depth profile at 600 degrees C had a broad peak near
8 nm. In contrast to the above results by RBS, retained oxygen was ha
rdly measured by Auger electron spectroscopy and X-ray photoelectron s
pectroscopy with Ar+ sputtering. This implies that there are at least
two types of trapped states: one is the physically trapped state of a
gaseous form (CO or O-2) and the other is a chemically bound state (B-
O bond). It was also found that boron oxide is formed even at RT using
simultaneous electron/He+ irradiation during H2O exposure, while the
oxygen molecule scarcely reacts with the B4C surface under the simulta
neous irradiation of electron/He+.