THE SPUTTERING OF DIFFERENT MODIFICATIONS OF BORON-NITRIDE UNDER ION AND ELECTRON-IRRADIATION

Authors
ELOVIKOV SS ELTEKOV VA NEGREBETSKAYA NN SUSHKOVA JV YURASOVA VE SHKARBAN II BUZHINSKIJ OI OPIMACH IV
Citation
Ss. Elovikov et al., THE SPUTTERING OF DIFFERENT MODIFICATIONS OF BORON-NITRIDE UNDER ION AND ELECTRON-IRRADIATION, Journal of nuclear materials, 215, 1994, pp. 1335-1338
Citations number
8
Categorie Soggetti
Nuclear Sciences & Tecnology","Metallurgy & Mining","Material Science
Journal title
Journal of nuclear materials → ACNP
ISSN journal
00223115
Volume
215
Year of publication
1994
Part
B
Pages
1335 - 1338
Database
ISI
SICI code
0022-3115(1994)215:<1335:TSODMO>2.0.ZU;2-P
Abstract
The sputtering of boron nitride crystals of hexagonal (h-BN) and rhomb ohedral (r-BN) modifications was studied experimentally and by compute r simulation. It was shown that sputtering yields are greater and chan ge more rapidly with the energy, E, of the incident argon ions (E = 0. 3-3 keV) for r-BN than for h-BN. The energy and space distributions of N and B atoms sputtered from the (0001) face are different for the tw o modifications of BN. The features of the observed phenomena are disc ussed.