INVESTIGATION OF SEMICONDUCTING YBACUO THIN-FILMS - A NEW ROOM-TEMPERATURE BOLOMETER

Citation
Pc. Shan et al., INVESTIGATION OF SEMICONDUCTING YBACUO THIN-FILMS - A NEW ROOM-TEMPERATURE BOLOMETER, Journal of applied physics, 80(12), 1996, pp. 7118-7123
Citations number
32
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
80
Issue
12
Year of publication
1996
Pages
7118 - 7123
Database
ISI
SICI code
0021-8979(1996)80:12<7118:IOSYT->2.0.ZU;2-0
Abstract
We explore the application of the semiconducting phases of YBaCuO thin films as a bolometer for uncooled infrared detection, For this study, four different structures were built with different types of buffer l ayers: YBaCuO on a Si substrate with and without a MgO buffer layer, a nd on an oxidized Si substrate with and without a MgO buffer layer. Th ese films were al amorphous without a detectable long range order. For comparison, crystalline tetragonal YBa2Cu3O6.5 and YBa2Cu3O6.3 thin f ilms on a LaAlO3 substrate were included into the study, All six films exhibited semiconducting resistance versus temperature characteristic s. The bolometer figures of merit, responsivity, and detectivity were calculated from the measured temperature coefficient of resistance (TC R) and the inherent noise characteristics of the temperature sensing e lement, The room temperature TCRs for all four amorphous films were gr eater than 2.5% K-1. The highest TCR of 4.02% K-1 was observed on the amorphous YBaCuO thin film deposited on MgO/Si without a SiO2 layer. T he TCR of the tetragonal films, on the other hand, remained 2% K-1 or less in the same temperature range. Noise measurements performed in th e 1-100 Hz frequency range revealed a quadratic dependence on the bias current as would be expected from ohmic electrical characteristics. T he Johnson and l/f regions were clearly identified in the noise spectr um, From TCR and noise measurements, we estimated the amorphous semico nducting YBaCuO bolometers would have a responsivity as high as 3.8x10 (5) V/W and a detectivity as high as 1.6x10(9) cm Hz(1/2)W for 1 mu A bias current and frame frequency of 30 Hz if integrated with a typical air-gap thermal isolation structure. (C) 1996 American Institute of P hysics.