CHARACTERISTICS OF POLYIMIDE FILM DEPOSITED BY IONIZED CLUSTER BEAM

Ionized cluster beam deposition (ICBD) has been employed to fabricate high-purity polyimide (PI) films. Pyromellitic dianhydride and oxydian iline were deposited using dual ionized cluster beam (ICB) sources. X- ray photo-electron spectroscoPY shows that the chemical properties of the surface are very sensitive to the ICBD conditions such as cluster ion acceleration voltage and ionization voltage. At optimum ICBD condi tions, the PI films have maximum imidization, and negligible impuritie s (approximately 1% isoimide). A metal-insulator-semiconductor device has been fabricated using PI as an insulator to investigate the interf acial properties. From C-V characteristics, the PI film deposited with ICB is found to have a fairly low interface trap density. The conduct ion mechanism in ion implanted PI film is described in terms of the co nducting grain model. The main factor determining the conductivity in PI is found to be closely related to the deposited damage energy induc ed by ion irradiation.