EXPRESSION FOR INTRINSIC CARRIER CONCENTRATION IN HG1-XCDXTE

We present an accurate expression for intrinsic carrier concentration in Hg1-xCdxTe alloys obtained within the Kane's k.p band model. Based on certain heuristic assumptions and approximations, we have concluded the form, n(i) = zeta(N(c)N(upsilon))1/2 exp (- E(g)/2k(B)T) with zet a = g1/2phi(1 - phih)-1 where g, phi and h, respectively, are function s of epsilon = E(g)/k(B)T, gamma = (ge(epsilon) N(c)/N(upsilon))1/2 an d N(c)/N(upsilon). The function zeta(epsilon, N(c)/N(upsilon)) represe nts correction (to the well known expression for non-degenerate parabo lic semiconductors) due to the non-parabolicity and degeneracy of the k.p bands, and has been obtained mainly by numerical fittings. The pre sent expression is accurate within 1% for all the alloys with chi grea ter-than-or-equal-to 0.17.