This article briefly summarizes the work of the author in the field of
vacuum arc ion sources from the first version made in 1984, which gen
erated metal ion beams of 20 cm diam with ion current up to 1 A at an
accelerating voltage up to 130 kV, pulse duration of 300 mus, and repe
tition rate up to 50 Hz, for doing high dose implantation, to the crea
tion in 1987 of the Technological Accelerator of Metal ions and Electr
on Kit (TAMEK) source which can produce, without switching off the sou
rce, the regimes of high-dose implantation, ion deposition, ion-beam m
ixing, and ion-beam-assisted deposition of the same metal ions, as wel
l as the generation of electron beams with the same time and energy pa
rameters and current up to 10 A. Sources with a vacuum arc current of
several amperes (I(arc) > 2 A, I(i) > 0.1 A for a copper cathode) and
milliseconds duration, and with a vacuum arc current up to 100 kA (I(i
) = 1-10 kA) and microseconds duration, are described. Application of
TAMEK sources for improving the properties of surface layers of metal
and dielectric materials are also discussed.