ELECTROCHROMISM IN TUNGSTEN OXYFLUORIDE FILMS MADE BY CHEMICALLY ENHANCED DC SPUTTERING

Authors
AZENS A STJERNA B GRANQVIST CG GABRUSENOKS J LUSIS A
Citation
A. Azens et al., ELECTROCHROMISM IN TUNGSTEN OXYFLUORIDE FILMS MADE BY CHEMICALLY ENHANCED DC SPUTTERING, Applied physics letters, 65(16), 1994, pp. 1998-2000
Citations number
19
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
65
Issue
16
Year of publication
1994
Pages
1998 - 2000
Database
ISI
SICI code
0003-6951(1994)65:16<1998:EITOFM>2.0.ZU;2-U
Abstract
Tungsten oxyfluoride films were prepared by reactive dc sputtering in plasmas containing O2 + CF4.. The deposition rate was large, particula rly when chemical sputtering was promoted by heating the target. The f ilms could show large charge insertion/extraction and high coloration efficiency. (C) 1994 American Institute of Physics.